This stage is called Saturation Region and the typical voltage allowed across the Collector-Emitter (VCE) or Collector-Base (VCB) could be 20V and 30V respectively. When this transistor is fully biased then it can allow a maximum of 700mA to flow across the collector and emitter.

Since it is very high it is normally used for amplification purposes. It has a maximum gain value of 300 this value determines the amplification capacity of the transistor normally S8550. S8550 is a PNP transistor hence the collector and emitter will be left open (Reverse biased) when the base pin is held at ground and will be closed (Forward biased) when a signal is provided to base pin. Note: Complete Technical Details can be found at the S8550 transistor datasheet given at the end of this article.

Commonly used as Class B Push-pull transistors.

Collector-Emitter voltage (VCEO) is -25 V.

Continuous Collector current (IC) is 500mA.

Low Voltage, High Current PNP Transistor.

The use of a BRT can reduce both system cost and board space.Current Drains out through emitter, normally connected to groundĬontrols the biasing of transistor, Used to turn ON or OFF the transistorĬurrent flows in through collector, normally connected to load The BRT eliminates these individual components by integrating them into a single device. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors a series base resistor and a base−emitter resistor. This series of digital transistors is designed to replace a single device and its external resistor bias network. Function : Digital Transistors (BRT) / NPN Transistors with Monolithic Bias Resistor Network

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